| PART |
Description |
Maker |
| AM29DL642G90MDI AM29DL642G AM29DL642G70I AM29DL642 |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Simultaneous Read/Write Flash Memo
|
AMD[Advanced Micro Devices]
|
| ES29LV800DB-90RTG ES29DL400FB-12RTG ES29LV400DB-90 |
4MBIT(512KX 8/256K X 16) CMOS 3.0 VOLT-ONLY, BOOT SECTOR FLASH MEMORY
|
EXCELSEMI[Excel Semiconductor Inc.]
|
| ES29BDS160DT-90RTGI ES29BDS160ET-90RTGI ES29BDS320 |
4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
优先(苏州)半导体有限公
|
| ES29F160FT-90RTG |
4Mbit(512Kx 8/256K x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory
|
Excel Semiconductor Inc.
|
| PM39LV010 PM39LV512-70JCE PM39LV010-70VC PM39LV010 |
(PM39LV010 - PM39LV512) 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory
|
PMC-Sierra, Inc.
|
| AT49HF010 AT49HF010-45JC AT49HF010-45JI AT49HF010- |
1-Megabit (128K x 8) 5-volt only CMOS flash memory, 40mA active, 0.3mA standby
THERMISTOR, NTC; Series:B578; Thermistor type:NTC; Resistance:3kR; Tolerance, resistance: /-1%; Beta value:3988; Temperature, lower limit, beta
DB25SC37
DSUB
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PDIP32
1-Megabit 128K x 8 5-volt Only CMOS Flash Memory 128K X 8 FLASH 5V PROM, 55 ns, PQCC32
|
ATMEL[ATMEL Corporation]
Atmel Corp.
Atmel, Corp.
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM29LV641GH35EI AM29LV641GL35EI AM29LV641GH55EI AM |
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OControl 64兆位个M x 16位）的CMOS 3.0伏特，只有统一闪存部门与VersatileI /输出⑩控
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OControl 4M X 16 FLASH 3V PROM, 70 ns, PBGA63
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O??Control
|
Advanced Micro Devices, Inc.
|
| AT49BV8011 AT49BV8011-12CI AT49LV8011 AT49LV8011-9 |
8M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Bottom Boot 800万位2.7伏读取和2.7伏字节写扇区闪存。底部启
x8/x16 Flash EEPROM x8/x16闪存EEPROM
8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
|
3M Company
Atmel, Corp.
AMIC Technology, Corp.
Advanced Micro Devices, Inc.
ATMEL[ATMEL Corporation]
|
| AM29F040-90PCB AM29F040-90FCB AM29F040-90ECB AM29F |
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PQCC32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDIP32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 4兆位24,288 × 8位）的CMOS 5.0伏只，扇区擦除闪
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PDIP32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| AM42DL640AG85IS AM42DL640AG AM42DL640AG25IT AM42DL |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM
|
SPANSION
Advanced Micro Devices
|
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